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Atomic layer deposition system ALD products
Atomic layer deposition system ALD products
Product details
Atomic layer deposition (ALD) is a method of forming thin films on a substrate by alternately introducing gas-phase precursors and reactant pulses into a reaction chamber and undergoing surface chemical reactions. Through self limiting precursor saturation reactions, highly controllable thin films with thickness, composition, morphology, and structure at the nanoscale are obtained. This method has no limitations on the substrate, especially suitable for substrates with high aspect ratios or complex three-dimensional structures. The thin films prepared by ALD have excellent properties such as high density (no pinholes), high shape retention, and large-area uniformity, which are beneficial for the development of thin films
It has significant practical significance.
Through the schematic diagram, it can be found that ALD is not a continuous process, but is composed of several semi reaction sequences. In step one, the precursor undergoes a chemical adsorption reaction A on the substrate surface. In step three, the reactants continue to undergo a surface chemical reaction B with the substrate that has already adsorbed the precursor. In steps two and four, inert gas is used to remove excess gas and by-products from the reaction chamber. A. The two and a half reactions of B have the characteristics of self limitation and complementarity, and the thickness of the film is determined by the four steps cycling in sequence.
Unlike traditional chemical vapor deposition, ALD has the characteristic of surface self confinement, which makes it stand out among many thin film preparation techniques and demonstrates a more prominent advantage!
By adjusting the number of reaction cycles, the thickness of the film can be precisely controlled to form a thin film with atomic level thickness
Thin film deposition temperature friendly, RT~400 ℃
Can be widely applied to substrates of various shapes, and can also generate thin films with good shape preservation in high aspect ratio structures and other complex three-dimensional structures
The precursor or reactant is a saturated chemical adsorption, which can ensure the generation of large-area uniform thin films
Based on self limiting characteristics, the ALD process does not require control over the uniformity of precursor or reactant flow rates
The film is smooth, dense, and free of pinholes
Suitable for interface modification and preparation of multi-component nano layered structures
• Capable of large-scale production
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